vishay siliconix sup/sub75n03-04 document number: 70745 s-62484-rev. f, 04-dec-06 www.vishay.com 1 n-channel 30-v (d-s), 175 c mosfet features ? trenchfet ? power mosfets ? 175 c rated maximum junction temperature product summary v (br)dss (v) r ds(on) ( )i d (a) 30 0.004 75 a to-220ab top v iew sup75n03-04 gd s drain connected to tab to-263 s g top view drain connected to tab d sub75n03-04 ordering information: sup75n03-04 SUP75N03-04-E3 (lead (pb)-free) sub75n03-04 sub75n03-04-e3 (lead (pb)-free) d g s n-channel mosfet notes: a. package limited. b. duty cycle 1 %. c. see soa curve for voltage derating. d. when mounted on 1" square pcb (fr-4 material). for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm. * pb containing terminations are not rohs compliant, exemptions may apply absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 75 a a t c = 125 c 75 a pulsed drain current i dm 250 pulse diode forward current i sm 250 continuous source current (diode conduction) i s 75 avalanche current i ar 75 avalanche energy l = 0.1 mh e as 280 mj repetitive avalanche energy b l = 0.05 mh e ar 140 maximum power dissipation t c = 25 c (to-220ab and to-263) p d 187 c w t a = 25 c (to-263) d 3.7 operating junction and storage temperature range t j , t stg - 55 to 175 c lead temperature ( 1 / 16 " from case for 10 sec.) to-220ab t l 300 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount (to-263) d r thja 40 c/w free air (to-220ab) 62.5 junction-to-case r thjc 0.6 available rohs* compliant
www.vishay.com 2 document number: 70745 s-62484-rev. f, 04-dec-06 vishay siliconix sup/sub75n03-04 notes: a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 13 gate-body leakage i gss v ds = 0 v, v gs = 20 v 500 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 125 c 50 v ds = 30 v, v gs = 0 v, t j = 175 c 200 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 120 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 75 a 0.0034 0.004 v gs = 4.5 v, i d = 75 a 0.005 0.006 v gs = 10 v, i d = 25 a, t j = 125 c 0.006 v gs = 10 v, i d = 25 a, t j = 175 c 0.008 forward transconductance b g fs v ds = 15 v, i d = 25 a 30 s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 10742 pf output capacitance c oss 1811 reverse transfer capacitance c rss 775 total gate charge q g v ds = 30 v, v gs = 10 v, i d = 75 a 200 250 nc gate-source charge q gs 40 gate-drain charge q gd 40 tu r n - o n d e l ay t i m e t d(on) v dd = 30 v, r l = 0.6 i d ? 50 a, v gen = 10 v, r g = 2.5 20 40 ns rise time t r 40 turn-off delay time t d(off) 190 fall time t f 95 source-drain diode ratings and characteristics diode forward voltage b v sd i f = 75 a, v gs = 0 v 1.3 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/s 70 120 ns peak reverse recovery current i rm(rec) 2.8 6 a reverse recovery charge q rr 0.1 0.36 c
document number: 70745 s-62484-rev. f, 04-dec-06 www.vishay.com 3 vishay siliconix sup/sub75n03-04 typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 0 50 100 150 200 250 0246810 v gs = 10, 9, 8, 7, 6, 5 v 4 v 3 v v gs - gate-to-source voltage (v) - transconductance (s) g fs 0 25 50 75 100 125 150 175 0 20406080100 t c = - 55 c 25 c 125 c v ds - drain-to-source voltage (v) c - capacitance (pf) 0 2000 4000 6000 8000 10000 12000 14000 0 6 12 18 24 30 c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge v gs - gate-to-source voltage (v) - drain current (a) i d 0 50 100 150 200 012345 25 c - 55 c t c = 125 c - on-resistance ( ) i d - drain current (a) r ds(on) 0.000 0.002 0.004 0.006 0.008 0 20 40 60 80 100 120 v gs = 10 v v gs = 4.5 v - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 4 8 12 16 20 0 100 200 300 400 v ds = 30 v i d = 75 a
www.vishay.com 4 document number: 70745 s-62484-rev. f, 04-dec-06 vishay siliconix sup/sub75n03-04 typical characteristics 25 c, unless otherwise noted thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?70745. on-resistance vs. junction temperature (normalized) - on-resistance t j - junction temperature (c) r ds(on) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v i d = 30 a source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c maximum avalanche and drain current vs. case temperature 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d safe operating area 1 10 100 0.1 1.0 10.0 limited by r ds(on) t c = 25 c single pulse 1 ms 10 ms 100 ms dc 100 s v ds - drain-to-source voltage (v) - drain current (a) i d 100.0 1000 normalized thermal transient impedance, junction-to-case 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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